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NTB5860N, NTP5860N, NVB5860N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V DS = 0 V, I D = 250 m A
I D = 250 m A
60
5.0
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 60 V
T J = 25 ° C
T J = 125 ° C
1.0
100
m A
Gate ? Source Leakage Current
I GSS
V DS = 0 V, V GS = $ 20 V
$ 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Threshold Temperature Coefficient
V GS(th)
V GS(th) /T J
V GS = V DS , I D = 250 m A
2.0
? 10.1
4.0
V
mV/ ° C
Drain ? to ? Source On ? Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 10 V, I D = 75 A
V DS = 15 V, I D = 30 A
2.5
38
3.0
m W
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C iss
10760
pF
Output Capacitance
Transfer Capacitance
C oss
C rss
V DS = 25 V, V GS = 0 V,
f = 1 MHz
1125
700
Total Gate Charge
Q G(TOT)
180
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 10 V, V DS = 48 V,
I D = 65 A
11
45
57
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn ? On Delay Time
t d(on)
27
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 48 V,
I D = 65 A, R G = 2.5 W
117
66
150
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I S = 20 A
T J = 25 ° C
T J = 125 ° C
0.76
0.63
1.1
V dc
Reverse Recovery Time
t rr
55
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, I S = 65 A,
dI S /dt = 100 A/ m s
29
26
Reverse Recovery Stored Charge
Q RR
76
nC
2. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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